Growth of GaAs nanowires observed by in situ TEM
Event details
| Date | 16.03.2018 |
| Hour | 15:15 |
| Speaker | Dr. Jean-Christophe Armand, C2N-CNRS Saclay, Univ. Paris Sud |
| Location | |
| Category | Conferences - Seminars |
I will present original experiments of GaAs nanowire growth by molecular beam epitaxy performed in an aberration-corrected transmission electron microscope. Growth can be observed in real-time with atomic resolution. It proceeds by vapor-liquid-solid mechanism with a liquid catalyst droplet on top of the nanowires. The formation of each GaAs monolayer is tracked, providing detailed information on growth phenomena. Relevant time scales and key parameters governing morphological and structural characteristics are extracted.
Such nanowires may adopt the cubic zinc blende or the hexagonal wurtzite structure. The formation of the two phases will be described in details and I will show how to obtain abrupt transitions between the two crystal phases, paving the way to the controlled fabrication of crystal phase heterostructures.
The French National Research Agency (ANR) is acknowledged for funding the TEMPOS/NANOMAX project in the framework of EQUIPEX "Investissements d'Avenir" programme.
About the research of the speaker: http://www.lpn.cnrs.fr/fr/ELPHYSE/Nanowires.php
Practical information
- Expert
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Organizer
- Raphaël Butté and Arnaud Magrez
Contact
- Raphaël Butté and Arnaud Magrez