Growth of III-V nanowires: from fundamental physics to device applications
Event details
| Date | 14.04.2014 |
| Hour | 13:15 |
| Speaker | Lucia Sorba, CNR NANO NEST, Pisa, Italy |
| Location | |
| Category | Conferences - Seminars |
The catalyst-assisted growth of semiconductor nanowires has emerged as a flexible and promising technology for the synthesis of self-assembled nanostructures with potential impact on the investigation of fundamental properties and on the development of innovative devices. Different materials can be easily combined in individual high-quality single crystal nanowires without latticematching constrains. Axial and radial heterostructured nanowires have been realized combining semiconductor materials with suitable physical properties. As a consequence, nanowire technology represents a powerful research and development platform for fundamental physics investigations as well as for scalable electronics and photonics applications.
In the first part of my presentation I will show examples for the realization of axial and radial heterostructured nanowires with controlled morphology and crystal structure. Next I will show the use of nanowire technology in the development of thermoelectric devices. I will show recent results on thermovoltages in single InAs nanowire field effect transistors.
Bio: After studying physics in Rome at the University “La Sapienza”, Lucia Sorba was post-doc at the Fritz Haber Institute in Berlin, before she became CNR scientist in Rome and then in Trieste. After two years as a visiting scientist at the Walter Schottky Institut in Munich she became associate professor at the University of Modena and then at Scuola Normale Superiore in Pisa. Presently she is Director of the Istituto Nanoscienze-CNR in Pisa. She is responsible of growth activities in Pisa (Nanowire growth by CBE) and Trieste (high mobility III-V MBE).
Selected recent publications:
A. Li, N. V. Sibirev, D. Ercolani, V. G. Dubrovskii, and L. Sorba, Readsorption Assisted Growth of InAs/InSb Heterostructured Nanowire
Arrays, Cryst Growth Des 13, 878–882 (2013).S. Funk, A. Li, D. Ercolani, M. Gemmi, L. Sorba, and I. Zardo, Crystal phase induced bandgap modifications in AlAs nanowires probed by resonant Raman scpectroscopy, ACS Nano 7, 1400- 1407 (2013).
S. Roddaro, D. Ercolani, M. A. Safeen, S. Suomalainen, F. Rossella, F. Giazotto, L. Sorba, and F. Beltram, Giant Thermovoltage in Single InAs Nanowire Field-Effect Transistors Nano Lett 13, 3638-3642 (2013).
In the first part of my presentation I will show examples for the realization of axial and radial heterostructured nanowires with controlled morphology and crystal structure. Next I will show the use of nanowire technology in the development of thermoelectric devices. I will show recent results on thermovoltages in single InAs nanowire field effect transistors.
Bio: After studying physics in Rome at the University “La Sapienza”, Lucia Sorba was post-doc at the Fritz Haber Institute in Berlin, before she became CNR scientist in Rome and then in Trieste. After two years as a visiting scientist at the Walter Schottky Institut in Munich she became associate professor at the University of Modena and then at Scuola Normale Superiore in Pisa. Presently she is Director of the Istituto Nanoscienze-CNR in Pisa. She is responsible of growth activities in Pisa (Nanowire growth by CBE) and Trieste (high mobility III-V MBE).
Selected recent publications:
A. Li, N. V. Sibirev, D. Ercolani, V. G. Dubrovskii, and L. Sorba, Readsorption Assisted Growth of InAs/InSb Heterostructured Nanowire
Arrays, Cryst Growth Des 13, 878–882 (2013).S. Funk, A. Li, D. Ercolani, M. Gemmi, L. Sorba, and I. Zardo, Crystal phase induced bandgap modifications in AlAs nanowires probed by resonant Raman scpectroscopy, ACS Nano 7, 1400- 1407 (2013).
S. Roddaro, D. Ercolani, M. A. Safeen, S. Suomalainen, F. Rossella, F. Giazotto, L. Sorba, and F. Beltram, Giant Thermovoltage in Single InAs Nanowire Field-Effect Transistors Nano Lett 13, 3638-3642 (2013).
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