Highly Efficient Organic Devices


Event details

Date and time 02.03.2015 13:15  
Place and room
Speaker Prof. Karl Leo, Institut für Angewandte Physik, TU Dresden
Bio: Karl Leo studied physics at the Albert-Ludwigs-Universität Freiburg and obtained the Diplomphysiker degree with a thesis on solar cells under supervision of Adolf Goetzberger at the Fraunhofer-Institut für Solare Energiesysteme. In 1986 he joined the Max-Planck-Institut für Festkörperforschung in Stuttgart for a PhD under the guidance of Hans Queisser. He then joined AT&T Bell Laboratories in Holmdel (New Jersey) as a postdoctoral research associate. In 1991 he joined the RWTH Aachen as an assistant professor and obtained the Habilitation degree. In 1993 he joined the Technische Universitaet Dresden as a professor of optoelectronics. Since 2002 he has been also with the Fraunhofer-Institut für Photonische Mikrosysteme, currently as director.

Prof. Leo works in the field of semiconductor optics and the physics of thin organic films. In 1992 he discovered Bloch oscillations in a semiconductor superlattice. His work on organic semiconductors led to Organic Light Emitting Diodes with the highest power efficiencies reported and to Organic Solar Cells with leading efficiency values. In 2002 he won the Leibniz award, which is Germany's most prestigious scientific award.
Category Conferences - Seminars
Organic semiconductors with conjugated electron system are currently intensively
investigated for (opto-) electronic applications. In the first part of this talk, I will discuss some
of the recent progress on highly efficient OLED and solar cells. White OLED have achieved
very high efficiencies /2/, significantly higher than fluorescent tubes, opening the path to a
new form of high-efficiency area lighting devices. Organic solar cells have reached 12%
using multijunction stacked devices /2/ and allow excellent transparent devices. Finally, I will
discuss our recent work on novel transistor structures: Recently, we have presented the first
organic inversion transistors /3/. Furthermore, new vertical transistor structures have reached
parameters which make them suitable even for challenging applications.
/1/ S. Reineke et al., Nature 459, 234 (2009).
/2/ Heliatek press release; R. Meerheim et al., Appl. Phys. Lett. 105, 063306 (2014)
/3/ B. Lüssem et al., Nature Comm. 4, 2775 (2013)

Practical information

  • General public
  • Free


  • Michele Ceriotti


  • Michele Ceriotti

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