IEM Seminar Series: The Chip Act match: Germany - USA and future trends in nanoelectronics - 2D Materials for Future Microelectronics
Event details
| Date | 07.09.2023 |
| Hour | 14:00 |
| Speaker | Prof Max Lemme, RWTH Aachen University, Chair of Electronic Devices, Germany |
| Location | |
| Category | Conferences - Seminars |
| Event Language | English |
Abstract
The talk will start with an overview of recently initiated large-scale initiatives in Germany linked to reconsidering the strategic importance of semiconductor manufacturing in Europe. I will then discuss how 2D materials could make a difference in various fields of future microelectronics, such as a continuation of “device scaling” (i.e. Moore’s Law), adding functionality with sensing, photonics, or future electronics enabled by neuromorphic and quantum computing [1]. Several specific examples will be shown based on recent experiments in photonics [2]–[5] and on neuromorphic devices [6]–[8]. Nevertheless, there are several key bottlenecks toward manufacturing of 2D materials. These will be discussed in the context of the work carried out within the European 2D Material Experimental Pilot Line (2D-EPL).
This work has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreements 952792 (2D-EPL) and 881603 (Graphene Flagship Core 3), and the German Ministry of Education and Research (BMBF) under grant agreements 16ES1121 (NobleNEMS), 03ZU1106AA (NeuroSys) and 16ME0399/16ME0400 (NEUROTEC II).
[1] M. C. Lemme, D. Akinwande, C. Huyghebaert, and C. Stampfer, “2D materials for future heterogeneous electronics,” Nat. Commun., vol. 13, no. 1, Art. no. 1, Mar. 2022, doi: 10.1038/s41467-022-29001-4.
[2] S. Parhizkar et al., “Two-Dimensional Platinum Diselenide Waveguide-Integrated Infrared Photodetectors,” ACS Photonics, vol. 9, no. 3, pp. 859–867, Mar. 2022, doi: 10.1021/acsphotonics.1c01517.
[3] N. Negm et al., “Graphene waveguide-integrated thermal infrared emitter,” presented at the 2022 Device Research Conference (DRC), Columbus, Ohio, USA, Jun. 2022, pp. 1–2. doi: 10.1109/DRC55272.2022.9855779.
[4] N. Negm et al., “Graphene thermal infrared emitters integrated into silicon photonic waveguides.” arXiv, Aug. 08, 2023. doi: 10.48550/arXiv.2308.04046.
[5] M. Prechtl et al., “Conformal and selective deposition of layered PtSe2: 2D goes 3D,” Adv. Funct. Mater., p. 2103936, 2021.
[6] M. Belete et al., “Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity,” Adv. Electron. Mater., p. 1900892, 2020, doi: 10.1002/aelm.201900892.
[7] L. Völkel et al., “Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes,” Adv. Funct. Mater., p. 2300428, doi: 10.1002/adfm.202300428.
[8] D. Braun et al., “Non-Volatile Resistive Switching in PtSe2-Based Crosspoint Memristors,” presented at the Device Research Conference (DRC), Columbus, Ohio, USA, Jun. 2022.
Bio
Max Christian Lemme is a professor at RWTH Aachen University and Scientific Director of AMO GmbH in Aachen, Germany, since 2017. He received his Ph.D. degree in Electrical Engineering from RWTH in 2004. He joined Harvard University from 2008-2010 with a Feodor Lynen Fellowship from the Alexander von Humboldt-Foundation to work on graphene devices and technology. He became Guest Professor at KTH Royal Institute of Technology, Sweden in 2010, and a DFG Heisenberg Professor at the University of Siegen in 2012. He received the “NanoFutur” award from the German BMBF in 2006 and an ERC Starting Grant in 2012. His research includes electronic, optoelectronic, and nanoelectromechanical devices based on new materials like graphene, related 2 D materials and perovskites. Recently, he has investigated new device concepts for neuromorphic computing.
The talk will start with an overview of recently initiated large-scale initiatives in Germany linked to reconsidering the strategic importance of semiconductor manufacturing in Europe. I will then discuss how 2D materials could make a difference in various fields of future microelectronics, such as a continuation of “device scaling” (i.e. Moore’s Law), adding functionality with sensing, photonics, or future electronics enabled by neuromorphic and quantum computing [1]. Several specific examples will be shown based on recent experiments in photonics [2]–[5] and on neuromorphic devices [6]–[8]. Nevertheless, there are several key bottlenecks toward manufacturing of 2D materials. These will be discussed in the context of the work carried out within the European 2D Material Experimental Pilot Line (2D-EPL).
This work has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreements 952792 (2D-EPL) and 881603 (Graphene Flagship Core 3), and the German Ministry of Education and Research (BMBF) under grant agreements 16ES1121 (NobleNEMS), 03ZU1106AA (NeuroSys) and 16ME0399/16ME0400 (NEUROTEC II).
[1] M. C. Lemme, D. Akinwande, C. Huyghebaert, and C. Stampfer, “2D materials for future heterogeneous electronics,” Nat. Commun., vol. 13, no. 1, Art. no. 1, Mar. 2022, doi: 10.1038/s41467-022-29001-4.
[2] S. Parhizkar et al., “Two-Dimensional Platinum Diselenide Waveguide-Integrated Infrared Photodetectors,” ACS Photonics, vol. 9, no. 3, pp. 859–867, Mar. 2022, doi: 10.1021/acsphotonics.1c01517.
[3] N. Negm et al., “Graphene waveguide-integrated thermal infrared emitter,” presented at the 2022 Device Research Conference (DRC), Columbus, Ohio, USA, Jun. 2022, pp. 1–2. doi: 10.1109/DRC55272.2022.9855779.
[4] N. Negm et al., “Graphene thermal infrared emitters integrated into silicon photonic waveguides.” arXiv, Aug. 08, 2023. doi: 10.48550/arXiv.2308.04046.
[5] M. Prechtl et al., “Conformal and selective deposition of layered PtSe2: 2D goes 3D,” Adv. Funct. Mater., p. 2103936, 2021.
[6] M. Belete et al., “Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity,” Adv. Electron. Mater., p. 1900892, 2020, doi: 10.1002/aelm.201900892.
[7] L. Völkel et al., “Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes,” Adv. Funct. Mater., p. 2300428, doi: 10.1002/adfm.202300428.
[8] D. Braun et al., “Non-Volatile Resistive Switching in PtSe2-Based Crosspoint Memristors,” presented at the Device Research Conference (DRC), Columbus, Ohio, USA, Jun. 2022.
Bio
Max Christian Lemme is a professor at RWTH Aachen University and Scientific Director of AMO GmbH in Aachen, Germany, since 2017. He received his Ph.D. degree in Electrical Engineering from RWTH in 2004. He joined Harvard University from 2008-2010 with a Feodor Lynen Fellowship from the Alexander von Humboldt-Foundation to work on graphene devices and technology. He became Guest Professor at KTH Royal Institute of Technology, Sweden in 2010, and a DFG Heisenberg Professor at the University of Siegen in 2012. He received the “NanoFutur” award from the German BMBF in 2006 and an ERC Starting Grant in 2012. His research includes electronic, optoelectronic, and nanoelectromechanical devices based on new materials like graphene, related 2 D materials and perovskites. Recently, he has investigated new device concepts for neuromorphic computing.
Practical information
- General public
- Free