III-V nanowires: how do they grow and which heterostructures can be realized
Event details
| Date | 22.09.2010 |
| Hour | 14:00 |
| Speaker | Mr Jean-Christophe Harmand |
| Location |
MXF-1
|
| Category | Conferences - Seminars |
In this presentation, I will first describe some mechanisms involved in the formation of III-V nanowires (NWs), with a particular focus on the case of Au catalyst-assisted molecular beam epitaxy. Our conditions lead to the well-known vapour-liquid-solid growth mode.
I will present a method providing detailed information on the growth kinetics of individual NWs. It appears that the vapour flux intercepted by the NW sidewalls is the dominant contribution to their elongation. The same method gives access to the statistics of nucleation at the catalyst drop/NW interface. We find that nucleation events are anti-correlated in time. This beneficial effect (it regulates growth) is due to the rapid depletion of the catalyst droplet in group V atoms upon forming each new NW monolayer.
Then, the challenging fabrication of complex and well-controlled heterostructures inside NWs will be discussed. Two experimental examples will be presented in details: (i) vertical AlGaAs/GaAs core-shell NWs buried into a GaAs matrix, which are very attractive to explore the 1D electronic transport; (ii) InP/InAs(P) axial heterostructures to form quantum dots (QDs) in free-standing photonic wires, a promising system to fabricate single photon sources.
Practical information
- General public
- Free
Contact
- Yvonne Cotting