IMT Talk - III-V Photonic Devices Monolithically Integrated on Silicon
Event details
| Date | 25.01.2021 |
| Hour | 10:00 › 11:00 |
| Speaker | Dr Kirsten Emilie Moselund |
| Location | |
| Category | Conferences - Seminars |
Abstract:
For more than half a century, researchers have been working on monolithic integration of III-V materials on silicon in order to achieve a seamless integration of active III-V photonic and electronic devices with silicon electronics and passives. In this talk I will discuss our work on Template-Assisted Selective Epitaxy (TASE) for the monolithic integration of photonic devices on silicon.
In this method we first use a combination of e-beam lithography and etching to define our structures in silicon. Using an oxide template, select features of the silicon may be replaced locally by active III-V material grown by metal-organic chemical vapor deposition (MOCVD). Since the geometry of the III-V features are determined by the shape of the cavity and not by carefully tuning growth conditions, this method provides advantages in terms of avoiding issues such as lateral overgrowth of junctions and presents a larger window for growth optimization.
The versatility of this technique will be demonstrated through several experimentally demonstrated devices. In-plane monolithic InGaAs photodetectors operating at above 25 GHz and with maxima in the O- and C-band, hybrid InGaAs/Si photonic crystal 1D nanobeam lasers emitting over the entire telecom spectrum, and different examples of III-V microdisk lasers. In the latter case strategies for cavity scaling as well as the impact of thermal effects will be discussed.
Bio:
Kirsten Emilie Moselund received the M.Sc. degree in engineering from the Technical University of Denmark (DTU) in 2003 and the Ph.D. degree in microelectronics from the Swiss Federal Institute of Technology in Lausanne (EPFL), Lausanne, Switzerland, in 2008. In 2008, she joined the IBM Zurich – Research, where she is currently managing the Materials Integration and Nanoscale Devices group, which among other things focuses on the development of III-V on silicon monolithic integration for novel photonic and electronic device concepts. Her research interests include nanofabrication technology, semiconductor physics, nanophotonics and novel electronic and photonic device concepts. She is the co-author of more than 100 scientific publications and holds an ERC grant on the development of nanophotonic light sources.
For more than half a century, researchers have been working on monolithic integration of III-V materials on silicon in order to achieve a seamless integration of active III-V photonic and electronic devices with silicon electronics and passives. In this talk I will discuss our work on Template-Assisted Selective Epitaxy (TASE) for the monolithic integration of photonic devices on silicon.
In this method we first use a combination of e-beam lithography and etching to define our structures in silicon. Using an oxide template, select features of the silicon may be replaced locally by active III-V material grown by metal-organic chemical vapor deposition (MOCVD). Since the geometry of the III-V features are determined by the shape of the cavity and not by carefully tuning growth conditions, this method provides advantages in terms of avoiding issues such as lateral overgrowth of junctions and presents a larger window for growth optimization.
The versatility of this technique will be demonstrated through several experimentally demonstrated devices. In-plane monolithic InGaAs photodetectors operating at above 25 GHz and with maxima in the O- and C-band, hybrid InGaAs/Si photonic crystal 1D nanobeam lasers emitting over the entire telecom spectrum, and different examples of III-V microdisk lasers. In the latter case strategies for cavity scaling as well as the impact of thermal effects will be discussed.
Bio:
Kirsten Emilie Moselund received the M.Sc. degree in engineering from the Technical University of Denmark (DTU) in 2003 and the Ph.D. degree in microelectronics from the Swiss Federal Institute of Technology in Lausanne (EPFL), Lausanne, Switzerland, in 2008. In 2008, she joined the IBM Zurich – Research, where she is currently managing the Materials Integration and Nanoscale Devices group, which among other things focuses on the development of III-V on silicon monolithic integration for novel photonic and electronic device concepts. Her research interests include nanofabrication technology, semiconductor physics, nanophotonics and novel electronic and photonic device concepts. She is the co-author of more than 100 scientific publications and holds an ERC grant on the development of nanophotonic light sources.
Practical information
- Informed public
- Free
- This event is internal
Organizer
- Institute of Microengineering