Power Electronic Devices and Systems based on Bulk GaN Substrates
Event details
| Date | 06.06.2013 |
| Hour | 14:00 › 15:00 |
| Speaker |
Dr. Isik C. Kizilyalli, Founder/CTO of Avogy Inc. Bio: Isik C. Kizilyalli received the B.S., M.S. and Ph.D. (1982, 1984, and 1988) degrees from the University of Illinois in Urbana. His doctoral thesis was completed under the supervision of Prof. Karl Hess in the area of computational semiconductor device physics. His career since spans fundamental research in semiconductors to technology development, commercialization of innovation, and entrepreneurship. Currently, he is the Founder/CTO of Avogy Inc. a venture backed and vertically integrated start-up concerned with GaN (Gallium Nitride) power electronics, energy efficiency, and power systems. Previously he was with AT&T Bell Laboratories and its spin outs Lucent Technologies and Agere systems, followed by Nitronex Corporation, and solar PV startup Alta Devices where his group holds the world record for single junction solar cell conversion efficiency. Dr. Kizilyalli was elected a Fellow of the IEEE for his contributions to Integrated Circuit Technology in 2007. He received the Bell Laboratories’ Distinguished Member of Technical Staff award in recognition for his contributions to CMOS transistor design. He has authored or coauthored 100 papers and holds 46 U.S. patents. |
| Location | |
| Category | Conferences - Seminars |
Abstract: Fast switching power semiconductor devices are the key to increasing the efficiency and reducing the size of power electronic systems. For the last three decades, silicon power devices (MOSFETS, IGBTs, and diodes) have dominated the power device market. During this time there have been tremendous improvements in silicon power device performance. However, these devices are now approaching the physical material limits of silicon. Alternative wide-band gap semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN) are enabling a new generation of power devices that will far exceed the performance of silicon-based devices. Wide band-gap semiconductors enable continued improvement of the efficiency and reduced system size of power electronics. SiC diodes have already been commercialized and they are increasingly utilized in applications that demand higher efficiency and reliability. However, there is great interest in developing GaN-based power devices because the fundamental material based figure-of-merit of GaN is at least 5X better than SiC and nearly 1000X over Si.
This presentation will provide an introduction to power electronics. Subsequently, the power-device figure-of-merit governed by the physical properties of the semiconductor material will be derived for Si, SiC, and GaN. It will be demonstrated that the full potential of the GaN material system can be realized by fabricating vertical devices growing epitaxial GaN layers on bulk GaN substrates by MOCVD (metal organic chemical vapor deposition). Published results from Si and SiC devices along with lateral (horizontal) GaN power devices fabricated on SiC or silicon substrates are compared with the True GaN™ approach. World record device performance results will be shown for devices with breakdown voltages of 600 to 2600 V and current levels approaching 100 A. Temperature characterization data, switching behavior in a boost circuit, and results from reliability testing will prove that applications such as server farms, inverters for solar and wind, solid state lighting, motor drives, and hybrid/electric vehicles will all benefit from the development of devices based on bulk GaN substrates.
The development of the GaN power ecosystem also requires innovation in the design of novel power circuit topologies, controller ICs, driver circuits, power modules, and low loss passives (capacitors and magnetics) aside from the GaN device technology. To this end, several enabling concepts will be put forth.
This presentation will provide an introduction to power electronics. Subsequently, the power-device figure-of-merit governed by the physical properties of the semiconductor material will be derived for Si, SiC, and GaN. It will be demonstrated that the full potential of the GaN material system can be realized by fabricating vertical devices growing epitaxial GaN layers on bulk GaN substrates by MOCVD (metal organic chemical vapor deposition). Published results from Si and SiC devices along with lateral (horizontal) GaN power devices fabricated on SiC or silicon substrates are compared with the True GaN™ approach. World record device performance results will be shown for devices with breakdown voltages of 600 to 2600 V and current levels approaching 100 A. Temperature characterization data, switching behavior in a boost circuit, and results from reliability testing will prove that applications such as server farms, inverters for solar and wind, solid state lighting, motor drives, and hybrid/electric vehicles will all benefit from the development of devices based on bulk GaN substrates.
The development of the GaN power ecosystem also requires innovation in the design of novel power circuit topologies, controller ICs, driver circuits, power modules, and low loss passives (capacitors and magnetics) aside from the GaN device technology. To this end, several enabling concepts will be put forth.
Practical information
- General public
- Free
Organizer
- Electrical Engineering (EE) Institute :
Prof. Giovanni De Micheli, EE Director
Prof. Jean-Ph. Thiran, EDEE Director
Prof. Yusuf Leblebici, Leading host