Structural, electronic and transport properties of amorphous/crystalline silicon heterojunctions
Event details
| Date | 27.05.2011 |
| Hour | 11:00 |
| Speaker | Tim F. Schulze, Helmholtz-Zentrum Berlin |
| Location |
MT2, IMT, Breguet 2, 2000 Neuchâtel
|
| Category | Conferences - Seminars |
Despite the widespread application in diodes and solar cells, fundamental aspects concerning the physics of a-Si:H/c-Si heterojunctions remain under dispute. In the present work, the microscopic properties of thin undoped a-Si:H layers (commonly employed as buffer layers in high-efficiency solar cells) are linked with the resulting behaviour of the heterojunction. Thus, insight is gained in the dependence of heterojunction band lineup, c-Si surface passivation, electronic transport and ultimately solar cell performance on the structural and electronic properties of the thin a-Si:H layers.
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- General public
- Free