Will Silicene or Germanene or Stanene be the Next Silicon?
Event details
| Date | 31.03.2016 |
| Hour | 15:15 |
| Speaker |
Guy LE LAY Aix-Marseille University, UMR 7345 - Laboratoire PIIM |
| Location |
PH-L1 503
|
| Category | Conferences - Seminars |
Among the 10 Fronts in Physics identified by Thomson Reuters for the years 2011-2014 “Silicene growth and properties” is number 4 after “Observation of Higgs boson”, “Globalneutrino data analysis” and “Nonlinear massive gravity” [1].
Silicene is a novel two-dimensional (2D) honeycomb allotrope of silicon with a significant spin-orbit coupling (SOC), born in 2012 [2]. Germanene and stanene, his germanium and tin cousins, recently synthesized, are also attracting considerable interest [3,4]. These three group IV graphene like elemental materials are 2D Topological Insulators and are directly compatible with the advanced Si electronic technologies
At variance with graphene, which descents from graphite, they are artificially created since they have no parent crystal in nature. They appear as emerging 2D electronic materials and are considered as promising candidates for ultimate scaling of nanoelectronic devices. Indeed, the recent fabrication of the first silicene field effect transistors operating at room temperature demonstrates their potential [5].
In this seminar, I will first present the seminal 3´3 silicene phase formed on a silver (111) substrate [2], its sister phases, its functionalization, and the growth and electronic properties of multi layer silicene, a Dirac material stable in ambient air, protected by its ultra-thin native oxide [6].
Finally, the recent synthesis of single and multi layer germanene on gold (111) templates, will be addressed [3,7], along with mention of first results on stanene [4].
These novel 2D materials are expected to be outstanding platforms for innovative properties, especially to observe the quantum spin Hall effect at room temperature.
REFERENCES
1. C. Day, Physics Today, 25 September 2015.
2. P. Vogt et al., Phys. Rev. Lett., 108, 155501 (2012).
3. M.E. Dávila et al., New J. Phys., 16, 095002 (2014).
4. Y. Fujii , J. Yuhara , K. Soda , M. Nakatake, L. Xian, Angel Rubio and G. Le Lay, to be published.
5. Tao et al., Nature Nanotechnol., 10, 227 (2015)
6. P. De Padova et al., 2D Mater., 1, 021003 (2014).
7. M. E. Dávila and G. Le Lay, Sci. Rep., 6, 20714 (2016).
Silicene is a novel two-dimensional (2D) honeycomb allotrope of silicon with a significant spin-orbit coupling (SOC), born in 2012 [2]. Germanene and stanene, his germanium and tin cousins, recently synthesized, are also attracting considerable interest [3,4]. These three group IV graphene like elemental materials are 2D Topological Insulators and are directly compatible with the advanced Si electronic technologies
At variance with graphene, which descents from graphite, they are artificially created since they have no parent crystal in nature. They appear as emerging 2D electronic materials and are considered as promising candidates for ultimate scaling of nanoelectronic devices. Indeed, the recent fabrication of the first silicene field effect transistors operating at room temperature demonstrates their potential [5].
In this seminar, I will first present the seminal 3´3 silicene phase formed on a silver (111) substrate [2], its sister phases, its functionalization, and the growth and electronic properties of multi layer silicene, a Dirac material stable in ambient air, protected by its ultra-thin native oxide [6].
Finally, the recent synthesis of single and multi layer germanene on gold (111) templates, will be addressed [3,7], along with mention of first results on stanene [4].
These novel 2D materials are expected to be outstanding platforms for innovative properties, especially to observe the quantum spin Hall effect at room temperature.
REFERENCES
1. C. Day, Physics Today, 25 September 2015.
2. P. Vogt et al., Phys. Rev. Lett., 108, 155501 (2012).
3. M.E. Dávila et al., New J. Phys., 16, 095002 (2014).
4. Y. Fujii , J. Yuhara , K. Soda , M. Nakatake, L. Xian, Angel Rubio and G. Le Lay, to be published.
5. Tao et al., Nature Nanotechnol., 10, 227 (2015)
6. P. De Padova et al., 2D Mater., 1, 021003 (2014).
7. M. E. Dávila and G. Le Lay, Sci. Rep., 6, 20714 (2016).
Practical information
- Expert
- Free
Organizer
- Arnaud Magrez and Raphaël Butté