"A grid reactor with low ion bombardment energy for large area PECVD of thin film silicon solar cells"
Event details
| Date | 04.02.2013 |
| Hour | 10:30 › 11:30 |
| Speaker | Dr. Michael Chesaux, CRPP-EPFL |
| Location |
PPB 019
|
| Category | Conferences - Seminars |
This study presents the development of a Plasma Enhanced Chemical Vapor Deposition (PECVD) reactor for the deposition of large area thin film silicon solar cells. The aim is to reduce the ion energy bombardment inherent in RF capacitively-coupled parallel-plate reactors conventionally used to deposit these solar cells. This ion bombardment could cause defects in silicon layers and deteriorate electrical interfaces.
The reduction of this ion energy bombardment is obtained by using localized remote plasma in a grid electrode inserted in the parallel-plate reactor. The plasma mechanisms responsible for the low ion bombardment energy in this novel reactor are the self-bias potential and a non sinusoidal plasma potential waveform. These mechanisms are measured with a wide range of complementary plasma diagnostics (Langmuir probes, retarding field energy analyzer, phase resolved optical emission Spectroscopy, capacitive probe) and are supported by a numerical fluid simulation.
The reduction of this ion energy bombardment is obtained by using localized remote plasma in a grid electrode inserted in the parallel-plate reactor. The plasma mechanisms responsible for the low ion bombardment energy in this novel reactor are the self-bias potential and a non sinusoidal plasma potential waveform. These mechanisms are measured with a wide range of complementary plasma diagnostics (Langmuir probes, retarding field energy analyzer, phase resolved optical emission Spectroscopy, capacitive probe) and are supported by a numerical fluid simulation.
Practical information
- Informed public
- Free
Organizer
- Prof. P. Ricci, CRPP
Contact
- Prof. P. Ricci, CRPP