EUV lithography and metrology for more Moore

The tremendous shrinkage of the semiconductor devices in the last five decades, as predicted by Moore’s law, has changed our daily lives. This progress was possible through advancements in photolithography and optical metrology. Extreme ultraviolet (EUV) lithography at 13.5 nm wavelength is the manufacturing method for high-volume semiconductor manufacturing at 7 nm technology node and below. To enable future progress, many challenges lie ahead. In my talk, I discuss the challenges of nanolithography, mask inspection, and wafer metrology and show how to overcome these by using new concepts such as resistless lithography and lensless imaging.
Short bio :
Yasin Ekinci is head of the Advanced Lithography and Metrology group at Paul Scherrer Institute. He obtained his PhD in Max-Planck Institute for Dynamics and Self-Organization, Göttingen, Germany in 2003. In 2004, he joined Paul Scherrer Institute as a postdoctoral researcher. Between 2006 and 2012 he worked as a postdoctoral researcher and subsequently as a senior scientist and a lecturer in Department of Materials at ETH Zürich. He is at PSI since 2009 working on various topics of nanoscience and technology, including EUV lithography, resist materials, lensless imaging, plasmonics, semiconductor nanostructures, and nanofluidics. He is author/co-author of about 180 papers and 5 patent applications. He is a fellow of SPIE.