Field mapping in semiconductor devices by transmission electron microscopy
There is a need to measure the electric, magnetic and strain fields in semiconductor devices with nm scale resolution. Firstly, we will present three different TEM-based technqies that can achieve this, off-axis electron holography, differential phase contrast and pixellated STEM mapping. We will then show the different techniques applied to different types of samples and discuss the advantages and disadvantages of each. The studied samples include doped semiconductors, piezoelectric fields in optoelectronics devices and devices for spintronics. We will conclude the presentation by showing some measurements made on semiconductor devices operated in-situ in the TEM.
Practical information
- General public
- Free
Organizer
- CIME