High efficiency HIT solar cell on thin (ƒ100 ƒÊm) silicon wafer
Event details
| Date | 17.09.2009 |
| Hour | 11:00 |
| Speaker | Dr. Mikio Taguchi |
| Location |
IMT Neuchâtel, PVLAB, Breguet 2 / Salle MT2 11.00-12.00
|
| Category | Conferences - Seminars |
ABSTRACT
The HIT (Heterojunction with Intrinsic Thin-layer) structure, which features a very thin undoped amorphous silicon (a-Si) layer inserted between doped a-Si layer and n-type c-Si, is now recognized as the structure that realizes an high efficiency solar cell with a high open circuit voltage (Voc). We have already reported the high conversion efficiency of 23.0% (Voc: 0.729 V, Jsc: 39.5 mA/cm2, FF: 0.80, total area: 100.4 cm2, confirmed by AIST) with this structure. The most striking feature of the HIT solar cell is its high Voc of more than 720 mV that proves an excellent surface passivation ability of a-Si layers at the hetero-interface.
For the cost reduction of solar cells, it is necessary to use thinner silicon wafer together with an excellent light trapping and well-passivated surface that are the essential for the high efficiency solar cells. It is well known that the Voc increases with decreasing the wafer thickness in the solar cell whose surface recombination velocity is enough low. We have experimentally confirmed that the Voc of the HIT solar cell with a thinner (<100 ƒÊm) silicon wafer showed higher than a conventional wafer.
This is quite important for us to utilize thinner silicon wafer with keeping the conversion efficiency at high level by compensating for the drop of the Isc with improved Voc in the thinner cell. So far, we have obtained the conversion efficiency of 21.4% with 85 ƒÊm thick wafer, and the extremely high Voc of 739 mV.
Recent our activity on HIT solar cells with thin silicon with will be presented.
Links
Practical information
- General public
- Free
Contact
- Stefaan de Wolf