IEM Distinguished Lecturers Seminar: Building Tomorrow’s Electronics: From Atoms to Devices
Event details
| Date | 28.04.2023 |
| Hour | 13:15 › 14:00 |
| Speaker |
Prof. Mathieu Luisier, Integrated Systems Laboratory, ETH Zurich, Switzerland |
| Location | Online |
| Category | Conferences - Seminars |
| Event Language | English |
The seminar will take place in ELA 2 and will be simultaneously broadcasted in the main auditorium in Neuchâtel Campus (MC A1 272).
Coffee and cookies will be served at 13:00 before the seminar, in front of the two auditoriums.
Abstract
Moore’s scaling law has survived during more than 50 years because the transistor fabrication recipes have been continuously adapted and technology boosters have been gradually introduced. The driving force behind these innovations has always been the intuition of clever researchers who benefited from the support of technology computer aided design (TCAD) tools to verify their predictions. These tools have been used in the semiconductor industry since the end of the 1970’s, when the first two-dimensional simulations of CMOS transistors became feasible on a supercomputer. Over the last 40 years, transistors have undergone tremendous evolutions, their dimensions being reduced by several orders of magnitude, while the physical models at the core of commercially available device simulators have remained the same: the electron behavior is still described by the classical laws of physics. However, it is known that today’s transistors with close to atomic dimensions are strongly affected by quantum mechanical effects, the most prominent one being the tunnelling of electrons through classically forbidden regions.
To accurately model nano-devices, reproduce their characteristics, and predict their performance even before they are fabricated, a new generation of advanced TCAD tools is needed. It should rely on atomistic quantum mechanical concepts to properly describe the physics and geometries at play. In this talk, the challenges and opportunities of the TCAD research activity will be first introduced before presenting our in-house tool and illustrating it with relevant applications.
Bio
Since 2022, Mathieu Luisier is Full Professor of Computational Nanoelectronics at ETH Zurich, Switzerland. He graduated in electrical engineering in 2003 and received his PhD in 2007, both from ETH Zurich. During that time, he started the development of a state-of-the-art quantum transport simulator called OMEN. After a one-year post-doc at ETH, he joined in 2008 the Network for Computational Nanotechnology at Purdue University, USA, as a research assistant professor. In 2011 he returned to ETH Zurich to become Assistant and then Associate Professor. His current research interests focus on the modeling of nanoscale devices, such as advanced transistors based on classical semiconductors and 2-D materials, photo-detectors, non-volatile resistive memory cells, and quantum computing systems.
Coffee and cookies will be served at 13:00 before the seminar, in front of the two auditoriums.
Abstract
Moore’s scaling law has survived during more than 50 years because the transistor fabrication recipes have been continuously adapted and technology boosters have been gradually introduced. The driving force behind these innovations has always been the intuition of clever researchers who benefited from the support of technology computer aided design (TCAD) tools to verify their predictions. These tools have been used in the semiconductor industry since the end of the 1970’s, when the first two-dimensional simulations of CMOS transistors became feasible on a supercomputer. Over the last 40 years, transistors have undergone tremendous evolutions, their dimensions being reduced by several orders of magnitude, while the physical models at the core of commercially available device simulators have remained the same: the electron behavior is still described by the classical laws of physics. However, it is known that today’s transistors with close to atomic dimensions are strongly affected by quantum mechanical effects, the most prominent one being the tunnelling of electrons through classically forbidden regions.
To accurately model nano-devices, reproduce their characteristics, and predict their performance even before they are fabricated, a new generation of advanced TCAD tools is needed. It should rely on atomistic quantum mechanical concepts to properly describe the physics and geometries at play. In this talk, the challenges and opportunities of the TCAD research activity will be first introduced before presenting our in-house tool and illustrating it with relevant applications.
Bio
Since 2022, Mathieu Luisier is Full Professor of Computational Nanoelectronics at ETH Zurich, Switzerland. He graduated in electrical engineering in 2003 and received his PhD in 2007, both from ETH Zurich. During that time, he started the development of a state-of-the-art quantum transport simulator called OMEN. After a one-year post-doc at ETH, he joined in 2008 the Network for Computational Nanotechnology at Purdue University, USA, as a research assistant professor. In 2011 he returned to ETH Zurich to become Assistant and then Associate Professor. His current research interests focus on the modeling of nanoscale devices, such as advanced transistors based on classical semiconductors and 2-D materials, photo-detectors, non-volatile resistive memory cells, and quantum computing systems.
Practical information
- General public
- Free