Metal-Semiconductor-Metal Heterostructures for Electrical, Optical and Plasmonic Applications
PHOTONICS, MICRO- and BIOENGINEERING SEMINAR
Abstract:
This talk will explore the controlled synthesis of monolithic metal-semiconductor-metal nanowire and nanosheet heterostructures, focusing on Al-Ge/Si-Al systems fabricated via a thermally initiated exchange reaction. These heterostructures overcome key challenges such as lateral strain relaxation and lattice mismatch, enabling the integration of dissimilar materials previously unattainable in layered structures. The resulting axial heterostructures feature atomically sharp interfaces and monocrystalline aluminum, scalable to wafer-level processing.
Aluminum’s broad plasmonic response, CMOS compatibility, and native oxide protection make it ideal for on-chip plasmonic applications. In our platform, Al leads act as both optical and electrical conduits, enabling efficient surface plasmon polariton (SPP) generation, guiding, and hot carrier injection in Schottky barrier field-effect transistors. The monolithic architecture ensures improved momentum matching, boosting plasmon detection efficiency.
We also demonstrate electrostatic modulation of Schottky barriers and the formation of a virtual p-n junction with tunable carrier polarity via split-gates. These capabilities support novel CMOS-compatible plasmonic photovoltaics and on-chip photonic-electronic integration. Finally, we show synaptic-like behavior in transistor devices responding to plasmonic signals, pointing to neuromorphic applications in autonomous nanosystems.
Zoom link for attending remotely: https://epfl.zoom.us/j/66995819194
Instructions for 1st-year Ph.D. students planning to attend this talk, who are under EDBB’s mandatory seminar attendance rule:
IN CASE you cannot attend in-person in the room, please make sure to
Abstract:
This talk will explore the controlled synthesis of monolithic metal-semiconductor-metal nanowire and nanosheet heterostructures, focusing on Al-Ge/Si-Al systems fabricated via a thermally initiated exchange reaction. These heterostructures overcome key challenges such as lateral strain relaxation and lattice mismatch, enabling the integration of dissimilar materials previously unattainable in layered structures. The resulting axial heterostructures feature atomically sharp interfaces and monocrystalline aluminum, scalable to wafer-level processing.
Aluminum’s broad plasmonic response, CMOS compatibility, and native oxide protection make it ideal for on-chip plasmonic applications. In our platform, Al leads act as both optical and electrical conduits, enabling efficient surface plasmon polariton (SPP) generation, guiding, and hot carrier injection in Schottky barrier field-effect transistors. The monolithic architecture ensures improved momentum matching, boosting plasmon detection efficiency.
We also demonstrate electrostatic modulation of Schottky barriers and the formation of a virtual p-n junction with tunable carrier polarity via split-gates. These capabilities support novel CMOS-compatible plasmonic photovoltaics and on-chip photonic-electronic integration. Finally, we show synaptic-like behavior in transistor devices responding to plasmonic signals, pointing to neuromorphic applications in autonomous nanosystems.
Zoom link for attending remotely: https://epfl.zoom.us/j/66995819194
Instructions for 1st-year Ph.D. students planning to attend this talk, who are under EDBB’s mandatory seminar attendance rule:
IN CASE you cannot attend in-person in the room, please make sure to
- send D. Reinhard a note well ahead of time (ideally before seminar day), informing that you plan to attend the talk online, and, during seminar:
- be signed in on Zoom with a recognizable user name (not any alias making it difficult or impossible to identify you).
Practical information
- Informed public
- Free
Organizer
Contact
- Marie Rodriguez