Plasma processing of microcrystalline silicon at high deposition rates for photovoltaic applications
Event details
| Date | 26.06.2009 |
| Hour | 11:00 |
| Speaker | Prof. Arno Smets, Depart. Applied Physics, University Eindhoven (NL) |
| Location |
EPFL - IMT-NE, Breguet 2, Neuchâtel Salle MT2
|
| Category | Conferences - Seminars |
ABSTRACT
Hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (ƒÝc-Si:H) are thin film silicon phases which are generally deposited at low processing temperatures by means of plasma enhanced chemical vapor deposition (PECVD) using hydrogen diluted silane gas mixtures. The lattice of dense a-Si:H is best described by a vacancy rich network (1-2 %) which lacks any medium and long range order, whereas the lattice of ƒÝc-Si:H consists of crystalline silicon grains (few nm¡¦s up to microns) imbedded in to an amorphous network or tissue. One hot application of these films is the integration in to thin silicon film photovoltaic multi-junction devices. In comparison to a-Si:H phase, the ƒÝc-Si:H phase has the advantage of an enhanced spectral response in the red part of the solar spectrum and a better opto-electronic stability under illumination.
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Practical information
- General public
- Free
Contact
- M.-Cl. Gauteaub