Quantum Transport in 2D Transition Metal Dichalcogenides
Event details
| Date | 11.12.2015 |
| Hour | 14:15 |
| Speaker | Alberto Morpurgo, University of Geneva |
| Location | |
| Category | Conferences - Seminars |
Following the discovery of graphene, it has become clear that there is a very broad category of materials enabling the realization of virtually perfect two-dimensional crystals of atomic thickness, exhibiting new interesting physical phenomena. Research on these “2D Materials” is developing at an impressive pace disclosing new results and posing interesting fundamental questions. The long-term goal is to understand and control the electronic properties of materials, and of their heterostructures, at the atomic scale, exploiting mechanisms that are at the same time unexpectedly powerful and simple. In this talk I will discuss our work on transport and opto-electronics of two-dimensional semiconducting transition metal dichalcogenides, i.e., materials like WS2 and MoS2. Much of the results that we have obtained originate from the study of transport through field-effect transistors with ionic-liquid gates, which enable the accumulation of surface charge carrier densities significantly in excess of 1014 cm-2 for both charge polarities (i.e., for both electrons or holes).
Results that I will discuss include the observation of gate-induced superconductivity in MoS2, for multilayer of all thickness down to individual monolayers; the use of ionic liquid gate to extract the band-gap of a semiconductor from simple measurements of transport in a field-effect transistor; the realization of light emitting transistors based on mono and bilayers of WS2. I will also discuss experiments on van der Waals hetesrostructures combining WS2 and graphene, which allow us to induce a very strong spin-orbit interaction in graphene, while preserving the high-electronic quality of the material and the basic aspects of Dirac electron physics.
Results that I will discuss include the observation of gate-induced superconductivity in MoS2, for multilayer of all thickness down to individual monolayers; the use of ionic liquid gate to extract the band-gap of a semiconductor from simple measurements of transport in a field-effect transistor; the realization of light emitting transistors based on mono and bilayers of WS2. I will also discuss experiments on van der Waals hetesrostructures combining WS2 and graphene, which allow us to induce a very strong spin-orbit interaction in graphene, while preserving the high-electronic quality of the material and the basic aspects of Dirac electron physics.
Practical information
- Informed public
- Free
Organizer
- Arnaud Magrez and Raphaël Butté