The electronic structure of tetragonal CuO

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Event details

Date 15.10.2012
Hour 12:30
Speaker Simon K. Moser, Laboratoire de Spectroscopie Electronique, ICMP - EPFL
Location
Category Conferences - Seminars
The cupric oxide CuO exhibits an insulating ground state with a correlation-induced charge-transfer gap and antiferromagnetism. It is, in principle, the most straightforward parent compound of the doped cuprates, and therefore has been theoretically studied as a model material for high temperature superconductivity.
Bulk CuO crystallizes in a low-symmetry monoclinic form, in contrast to the rocksalt structure typical of late 3d transition metal monoxides. It was recently synthesized by epitaxial growth on SrTiO3 substrates in a higher symmetry tetragonal structure with elongated c-axis (Siemons et al. PRB 79, 2009). Extrapolating the behavior of other 3d transition metal monoxides, this phase of CuO is predicted to have a much higher Neel temperature than its bulk counterpart. At beamline 7 of the Advanced Light Source, we have grown tetragonal CuO thin films by pulsed laser deposition and investigated their electronic structure by angle-resolved photoelectron spectroscopy (ARPES). These measurements represent the first mapping of the band structure of this new material, not available in bulk phase, and will serve as a reference point for future doping experiments.

Practical information

  • Informed public
  • Free

Organizer

  • ICMP (Barbara Mansart)

Contact

  • Dr Barbara Mansart

Tags

/ICMP/

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