The hydride stretching modes of hydrogenated vacancies in amorphous and nanocrystalline silicon: a helpful tool for material characterization
Event details
| Date | 25.06.2009 |
| Hour | 16:00 |
| Speaker | Prof. Arno Smets, Depart. Applied Physics, University Eindhoven (NL) |
| Location |
IEPFL- MT - NE, Breguet 2, Neuchâtel salle MT2
|
| Category | Conferences - Seminars |
ABSTRACT
Hydrogen related defects and impurities have been observed in every solid phase of silicon, like crystalline (c-Si), nano-/microcrystalline (nc-Si:H) and amorphous silicon (a-Si:H) and can significantly affect the nature of the silicon, like the electrical and structural properties up to the diffusivity of dopants within the silicon. Recently, the utilization of the signature of the hydride stretching modes in the infrared (SMs) has been proposed as a helpful material characterization tool [1-4]. The SM frequency positions depend critically on the hydrogen incorporation configurations and therefore the SM signature can reveal the microstructure of various hydrogenated silicon phases.
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Practical information
- General public
- Free
Contact
- M.-Cl. Gauteaub