There's plenty of devices in new flatland
Event details
| Date | 30.04.2013 |
| Hour | 10:00 › 11:00 |
| Speaker |
Dr Tony Low, IBM TJ Warson Research Center, USA Bio: Tony Low received his Ph.D. degree in Electrical and Computer Engineering from the National University of Singapore in 2008. In 2007, he was a visiting scientist at the Network for Computational Nanoelectronics at Purdue University, where he became a post-doctoral research associate in 2008. In 2011, he joined the Nanoscale Science and Technology group at IBM TJ Watson research center. His research interests are in the theory and simulations of novel materials and devices for applications in computing, information and energy. He has contributed extensively to the studies of graphene electronics, optoelectronics and plasmonics devices, and recently on other two-dimensional transition metal dichalcogenides materials. He had also worked on conventional semiconductor field effect devices and its spin variants. He has over 40 scientific publications in peer-reviewed journals, including Nano Letters, Physical Review Letter, Nature Nanotechnology, Nature Photonics and the IEEE IEDM, and was also regularly invited to speak at related conferences and universities. His research work has been recognized with multiple international awards including the Singapore Millennium Fellowship and the IEEE Electron Device Society Fellowship. He is also the industry-university liaison to several research programs on novel nanoelectronics devices, funded by National Science Foundation and the Nanoelectronics Research Initiative. |
| Location | |
| Category | Conferences - Seminars |
The emergence of new technology is often preceded by significant advances in materials. Recent discovery of a new class of two-dimensional (2D) crystals, with widely diverse electrical, mechanical and optical properties potentially presents such an opportunity. In particular, the well-known semi-metallic graphene, which possesses unique properties such as gate tunability, high carrier mobility, wide-band optical absorption and compatibility with silicon processing technologies has already been identified for range of electronic, optoelectronic and plasmonic applications. In this talk, I will review our recent efforts in the exploration of these new devices, drawing upon both theoretical and experimental studies.
In particular, graphene’s unique hot carrier dominated optoelectronic response at room temperature is unlike other materials, making it ideal for detecting and harvesting of infrared energy from the environment. Recently, we have made several key advances that brings us closer towards this goal. This includes the understanding and engineering of basic optoelectronic responses in graphene, its light-matter interaction, and the energy cooling pathways of photo-excited carriers. Lastly, I will discuss how the combination of graphene with other 2D materials would further widen the possibilities of devices, and also recent effort in this nascent field.
In particular, graphene’s unique hot carrier dominated optoelectronic response at room temperature is unlike other materials, making it ideal for detecting and harvesting of infrared energy from the environment. Recently, we have made several key advances that brings us closer towards this goal. This includes the understanding and engineering of basic optoelectronic responses in graphene, its light-matter interaction, and the energy cooling pathways of photo-excited carriers. Lastly, I will discuss how the combination of graphene with other 2D materials would further widen the possibilities of devices, and also recent effort in this nascent field.
Practical information
- General public
- Free
Organizer
- STI