Interface Bonding, Reactions and Defect Formation at Semiconductor Interfaces
Event details
| Date | 15.06.2011 |
| Hour | 12:30 |
| Speaker | Prof. Len Brillson, Ohio State University, Columbus |
| Location |
CE 4 - Centre midi
|
| Category | Conferences - Seminars |
The formation of barriers to charge transfer at semiconductor interfaces has been a focus of considerable research for over fifty years. While early work centered on the intrinsic physical properties of the semiconductor, ultrahigh vacuum surface studies revealed the importance of extrinsic, interface-specific effects in understanding the systematic behavior of these Schottky barriers. Without intervening adsorbate layers, chemical reactions and interdiffusion can occur, even near room temperature, which alter the interface region, introducing new phases, crystal defects, and localized electronic states. With the advent of surface science, new methods have emerged to predict and control Schottky barriers at the nanoscale.
Practical information
- General public
- Free
Contact
- Prof. Giorgio Margaritondo